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 RF3108
0
Typical Applications * 3V Dual-Band/Triple-Band GSM Handsets * Commercial and Consumer Systems * Portable Battery-Powered Equipment * GPRS Class 12 Compatible
TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE
Product Description
The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50 input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM/DCS and PCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1910MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx10mm) LCC, minimizing the required board space.
1.40
1.40
1.40
10.0 + 0.10 1.40 1.00 typ.
1.40
1.40
1.30
0.30
0.60 typ. 9.0 + 0.10
Note orientation of Pin 1.
0.90 typ.
0.38 Ref. 1.55 + 0.10
NOTE: Shaded area represents Pin 1.
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: Module
Features * Single 2.9V to 4.7V Supply Voltage * +35.5dBm GSM Output Pwr at 3.5V * +33.0dBm DCS/PCS Output Pwr at 3.5V
VCC PCS IN PCS VAPC GND GSM VAPC GSM IN VCC
1 2 3 4 5 6 7
14 13 12 11 10 9 8
PCS OUT GND GND VCC GND GND GSM OUT
* 55% GSM and 50% DCS/PCS Efficiency * Supports GSM, E-GSM and DCS/PCS * 9mmx10mm Package Size
Ordering Information
RF3108 Triple-Band GSM/DCS/PCS Power Amp Module RF3108PCBA-41XFully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A7 051003
2-391
RF3108
Absolute Maximum Ratings Parameter
Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature
Rating
-0.5 to +6.0 -0.5 to +3.0 2400 +13 50 8:1 -40 to +85 -55 to +150
Unit
VDC V mA dBm % C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall (GSM Mode)
Operating Frequency Range Maximum Output Power
Specification Min. Typ. Max.
Unit
Condition
Temp=+25C, VCC =3.5V, VAPCGSM =2.6V, PIN =6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154s
Total Efficiency Input Power for Max Output Output Noise Power
+34.5 34.0 +32.0 47 +4
880 to 915 35.5
55 +6
+8 -72 -81
MHz dBm dBm dBm % dBm dBm dBm dBm dBc dBc dBm
Temp = 25C, VCC =3.5V, VAPCGSM =2.6V 50% Duty Cycle, Pulse Width=2308s Temp=+85 C, VCC =2.9V, VAPCGSM =2.6V At POUT,MAX, VCC =3.5V RBW=100kHz, 925MHz to 935MHz, POUT > 34.5dBm RBW=100kHz, 935MHz to 960MHz, POUT > 34.5dBm VAPCGSM =0.2V, PIN=+8dBm
Forward Isolation Second Harmonic Third Harmonic All other non harmonic spurious Input Impedance Input VSWR Output Load VSWR Output Load Impedance
-40 -50 50
-30 -35 -43 -36 2.5:1
8:1 50 2.6 0.2 V V dB dB/V pF mA A S V V V A A
POUT,MAX-5dBPower Control VAPC1
Power Control "ON" Power Control "OFF" Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off Time 0.5 70 100 4.5 10 5 10 2
Overall Power Supply
Power Supply Voltage 2.9 2.9 Power Supply Current 2 1 3.5 4.7 4.3 10
2-392
Rev A7 051003
RF3108
Parameter Specification Min. Typ. Max. Unit Condition
Temp=25C, VCC =3.5V, VAPCDCS/PCS =2.6V, PIN =6dBm, Freq=1710MHz to 1910MHz, 25% Duty Cycle, Pulse Width=1154s +32 31.5 31.5 31.0 29.5 29.0 45 40 Recommended Input Power Range Output Noise Power +4 1710 to 1910 +33 32.5 MHz dBm dBm dBm dBm dBm dBm % % +8 -77 dBm dBm RBW=100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz, POUT > 34.5dBm, VCC =3.5V VAPCDCS/PCS =0.2V, PIN =+8dBm POUT, = +32.5dBm Temp=25C, VCC =3.5V, VAPCDCS/PCS =2.6V, 1710MHz to 1785MHz 1850MHz to 1910MHz 50% Duty Cycle, Pulse Width 2308s, 1710MHz to 1785MHz 1850MHz to 1910MHz Temp=+85C, VCC =2.9V, VAPC =2.6V, 1710MHz to 1785MHz 1850MHz to 1910MHz At POUT,MAX, VCC =3.5V, 1710MHz to 1785MHz At POUT,MAX, VCC =3.5V, 1850MHz to 1910MHz
Overall (DCS/PCS Mode)
Operating Frequency Range Maximum Output Power
30.0 29.5 52 47 +6
Total Efficiency
Forward Isolation Second Harmonic Third Harmonic All other spurious Input Impedance Input VSWR Output Load VSWR Output Load Impedance
-37 -60 -65 50 8:1 50
-30 -45 -50 -36 2.5
dBm dBc dBc dBm
2.6 V V dB dB/V pF mA A ns V V V A A
POUT,MAX -5dBPower Control VAPC2
Power Control "ON" Power Control "OFF" Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off TIme 0.2 62 0.5 68 100 4.5 10 5 10 100
Overall Power Supply
Power Supply Voltage 2.9 2.9 Power Supply Current 1.3 1 3.5 4.7 4.3 10
Rev A7 051003
2-393
RF3108
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Pkg Base Function Description Power Supply for the driver stage of the DCS/PCS band. VCC1 DCS/PCS IN RF Input to the DCS/PCS band. This is a 50 input. DCS/PCS Power control for the pre-amplifier, driver, and output stage of the DCS/PCS band. VAPC GND GSM VAPC GSM IN VCC2 GSM OUT GND GND VCC3 GND GND DCS/PCS OUT GND
Ground connection to overall package. Power control for the pre-amplifier, driver, and output stage of the GSM band. RF input to the GSM band. This is a 50 input. Power supply for the driver stage of the GSM band. RF output for the GSM band. This is a 50 output. The output load line matching is contained internal to the package. Ground connection to overall package. Ground connection to overall package. Power supply for the pre-amplifier and output stage for both the DCS/PCS and GSM bands. Ground connection to overall package. Ground connection to overall package. RF output for the DCS/PCS band. This is a 50 output. The output load line matching is contained internal to the package. Ground connection to overall package.
Interface Schematic
2-394
Rev A7 051003
RF3108
Theory of Operation and Application Information
The RF3108 is a triple-band, GSM/DCS/PCS power amplifier with two separate RF inputs and outputs that are internally matched to 50. Pins 2 and 14 of the device provide the RF input and output for the DCS/PCS band, which is optimized for performance between 1710MHz and 1910MHz. Pins 5 and 8 of the device provide the RF input and output for the GSM band, which is optimized for performance between 880MHz and 915MHz. Both bands include an internal DC-blocking capacitor to protect the device from external DC source inputs and block internal DC from exiting the inputs and outputs of the module. The performance is similar to the performance of the RF2173 and RF2174 MIMIC devices used in dual- or triple-band applications. However, the RF3108 module includes the matching and bypass capacitors required for operation internal to the 9mmx10mm module. However, some external components are required to improve stability, isolation and noise power performance. These components are included on the evaluation board and schematic, and will be described in the following paragraphs. The GSM 900MHz band provides 32dB and the DCS/PCS 1710MHz to 1910MHz band provides 28dB of small signal gain at full output power. Therefore, the drive level required to fully saturate the output is +4dBm for each band. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive 3V supply to operate to full specification. The DCS/PCS band input is located at pin 2 of the device and requires no external components. The GSM 900MHz band input is located at pin 6 of the device and also does not require external components. However, a 180 resistor is included at the input of the GSM band to improve the input impedance and isolation performance at low VAPC levels. The output for both high and low bands are internally matched to 50 at the output of pin 14 and 8. A 50 microstrip should be used to interface to the input and output connections. Power control for the GSM 900MHz band is provided through pin 5 of the device, and pin 3 for the DCS/PCS band. The VAPC inputs do not contain any internal bypass capacitors and will require some external filtering. Because the VAPC filtering capacitor is external to the device, the user has the option of choosing a capacitor value that meets the control loop BW and filtering requirement for various applications. In most typical applications with a closed loop power control, the recommended bypass capacitor for this input is approximately 33pF for the GSM band, and 12pF for the DCS/PCS band. However in open loop operation, a 10nF VAPC bypass capacitor is recommended for both bands to filter noise from the external VAPC source. A 10nF capacitor is installed on pins 3 and 5 on the current evaluation board (see the evaluation board schematic). Noise on the VAPC input will degrade the noise power performance of the device, so care should be used to provide a clean VAPC input signal. This is especially important when measuring noise power or stability performance. The voltage supply VCC contains internal bypass capacitors and inductors to filter unwanted noise on the DC supply voltage. However, the main VCC input to the device at pin 11 requires some additional bypass capacitors as shown in the evaluation board schematic. C5 (1uF) and C4 (3.3uF) are required to improve the stability performance. All the internal ground connections are connected to a series of ground pads located on the backside of the package as shown in the pin out diagram. Pins 4, 9, 10, 12, and 13 are also ground connections. The final stages of both bands are connected to the ground pads on the backside of the package. Therefore this ground connection is essential to dissipate heat and to provide proper current flow. Refer to the evaluation board layout as an example of the vias locations and quantity required for proper connection.
Rev A7 051003
2-395
RF3108
Pin Out
VCC 1 GND GND GND GND 14 PCS OUT
PCS IN
2 GND
GND
GND
13
GND
PCS VAPC
3
GND
GND
12
GND
GND
4
GND
GND
GND
GND
11
VCC
GSM VAPC
5 GND
GND
GND
10
GND
GSM IN
6
GND
GND
9
GND
VCC
7
GND
GND
GND
GND
8
GSM OUT
Top View
2-396
Rev A7 051003
RF3108
Application Schematic
VCC
DCS/PCS RF IN
50 strip
50 strip 1 2 14
(0.25 typical microstrip loss)
PCS/DCS RF OUTPUT
13 12 11 10 9 50 strip 8
(0.15 typical microstrip loss)
DCS/ PCS VAPC2
50 strip 3 4 VCC
GSM VAPC1 GSM RF IN VCC 50 strip
5 6 7
1 F
4.7 F
GSM RF OUTPUT
Note: Add the typical microstrip loss to the output power measured at the output connector of evaluation board to calculate the actual power at the RF3108 module output pin.
Evaluation Board Schematic
VCC C1* 1 nF C2* 10 nF P1 1 CON1 GND P2-1 P2 1 CON1 50 strip 1 2 J5 DCS/PCS VAPC2 50 strip 3 C7 10 nF 50 strip 5 C6 10 nF 50 strip R1 180 6 7 10 9 50 strip 8 J4 GSM RF OUTPUT 4 12 11 C5 1 F + C4 3.3 F VCC 14 13 VCC
J1 DCS/PCS RF IN
50 strip
J2 PCS/DCS RF OUTPUT
J6 GSM VAPC1
J3 GSM RF IN
3108400B
VCC C3* 10 nF
Components with (*) following the reference designator should not be populated on the evaluation board.
Rev A7 051003
2-397
RF3108
Evaluation Board Layout Board Size 2.0" x 2.0"
Board Thickness 0.031"; Board Material FR-4; Multi-Layer
2-398
Rev A7 051003
RF3108
-35.0
2nd and 3rd Harmonic Performance GSM Band @3.5V VCC, +6dBm PIN, 2.6V VAPC
2nd Fo(dBc) 3rd Fo(dBc)
-29.0
Isolation Performance GSM Band @ 3.5V VCC, 2.6V VAPC
Iso@+8dBm Pin
-30.0
Iso@+4dBm Pin Iso@+6dBm Pin
-40.0 -31.0
Harmonic Level (dBc)
Isolation (dBm)
-32.0
-45.0
-33.0
-34.0 -50.0 -35.0
-55.0 880.0 885.0 890.0 895.0 900.0 905.0 910.0 915.0
-36.0 880.0 885.0 890.0 895.0 900.0 905.0 910.0 915.0
Frequency
Frequency (MHz)
36.0
Power and Efficiency Performance @ 3.5V VCC, 2.6V VAPC, +6dBm PIN
53.0
40.0
Power Control Response @ 3.5V VCC, 2.6V VAPC, +6 dBm PIN, 900 MHz
Power
60.0
52.0 35.8 51.0 35.6
30.0
Efficiency 50.0
20.0 40.0
Efficiency (%)
35.4
49.0
0.0
30.0
48.0 35.2 47.0 35.0 Power(+6dBm Pin) Efficiency (+6dBm Pin) 34.8 880.0 885.0 890.0 895.0 900.0 905.0 910.0 45.0 915.0 46.0
-10.0 20.0 -20.0 10.0 -30.0
-40.0 0.1 0.3 0.4 0.6 0.7 0.9 1.0 1.2 1.3 1.5 1.6 1.8 1.9 2.1 2.2 2.4 2.5 2.7 2.8
0.0
Frequency
Power Control Voltage (V)
-36.0
Isolation Performance DCS/PCS Band @ 3.5V VCC, 2.6VAPC DCS/PCS BAND
-33.0
Isolation Performance DCS/PCS Band @ 3.5V VCC, 2.6VAPC DCS/PCS Band
Iso@+4dBm Pin Iso@+6dBm Pin
-36.5
-34.0 Iso@+8dBm Pin
-37.0
-35.0
Isolation (dBm)
-37.5
Isolation (dBm)
-36.0
-38.0
-37.0
-38.5
Iso@+4dBm Pin Iso@+6dBm Pin Iso@+8dBm Pin
-38.0
-39.0 1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0
-39.0 1800.0 1820.0 1840.0 1860.0 1880.0 1900.0
Frequency
Frequency
Rev A7 051003
2-399
Efficiency (%)
Power (dBm)
Power (dBm)
50.0
10.0
RF3108
35.0
DCS Band Power and Efficient Performance @ 3.5V VCC, 2.6V VAPC, +8dBm PIN
52.0
35.0
PCS Band Power and Efficiency Performance @ 3.5V VCC, 2.6V VAPC, +8dBm PIN
Power (dBm) Efficiency (%)
51.0
34.5 50.0 34.0 48.0
34.5
49.0 34.0 47.0
Efficiency (%)
33.0
46.0
33.0
45.0
32.5 44.0 32.0 42.0 31.5 Power (dBm) Efficiency 31.0 40.0
32.5 43.0 32.0 41.0 31.5
31.0 1800.0 1820.0 1840.0 1860.0 1880.0 1900.0
39.0
1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0
Frequency
Frequency
-50.0
2nd and 3rd Harmonic Performance (DCS/PCS Band) @ 3.5V VCC, +6dBm PIN, 2.6V VAPC
2nd Fo(dBc)
40 Power 30 Efficiency 20
Power Control Response @3.5V, 2.6V VAPC, +6dBm PIN, 1750MHz
Efficiency (%)
6 5 4 3 2 0 2.8
Power (dBm)
-55.0
3rd Fo(dBc)
-60.0
Harmonic (dBc)
Power (dBm) Power (dBm)
33.5
33.5
10
-65.0
0
-10
-70.0 -20 -75.0 -30
-80.0 1700.0 1730.0 1760.0 1790.0 1820.0 1850.0 1880.0 1910.0
-40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
Frequency
Power Control Voltage (V)
40.0
Power Control Response @3.5V VCC, 2.6V VAPC, +6dBm PIN, 1850MHz
Power
60.0
30.0
Efficiency 50.0
20.0 40.0
0.0
30.0
-10.0 20.0 -20.0 10.0 -30.0
-40.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.0
Power Control Voltage (V)
2-400
Rev A7 051003
Efficiency (%)
Power (dBm)
10.0


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